Tunneling Current–Voltage Characteristics of Graphene Field-Effect Transistor
نویسندگان
چکیده
منابع مشابه
Computational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET)
By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2007
ISSN: 1882-0778,1882-0786
DOI: 10.1143/apex.1.013001